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    Semiconductor Process Reliability in Practice

    By: Zhenghao Gan, Juin Liou

    Date Released

    Out of Print

    Proven processes for ensuring semiconductor device reliability

    Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.

    Coverage includes:

    Basic device physics

    Process flow for MOS manufacturing

    Measurements useful for device reliability characterization

    Hot carrier injection

    Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB)

    Negative bias temperature instability

    Plasma-induced damage

    Electrostatic discharge protection of integrated circuits


    Stress migration

    Intermetal dielectric breakdown

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